Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Verpackung | Bag |
| Teilestatus | Aktiv |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Verpackung | Bag |
| Teilestatus | Aktiv |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
|---|---|
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Power - Max | 50 W |
| Package / Case | TO-213AA, TO-66-2 |
|---|---|
| Hersteller-Gehäuse | TO-66 |
| Betriebstemperatur | -65°C ~ 200°C (TJ) |
|---|