Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 400mOhm @ 1.4A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 544 pF @ 50 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | Automotive, AEC-Q101, TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta), 3.5A (Tc) |
| Max. Verlustleistung | 1.7W (Ta), 10.4W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | MLPAK33 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|