Allgemein
| Basis-Teilenummer | PSMN6R9 |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50.3 nC @ 10 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | PSMN6R9 |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50.3 nC @ 10 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Max. Verlustleistung | 238W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SC-100, SOT-669 |
| Hersteller-Gehäuse | LFPAK56, Power-SO8 |
| Betriebstemperatur | 175°C (TJ) |
|---|