Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3.72mOhm @ 25A, 10V |
|---|---|
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1334 pF @ 12 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Max. Verlustleistung | 65W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-1210, 8-LFPAK33 (5-Lead) |
| Hersteller-Gehäuse | LFPAK33 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|