Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 3.3 V |
| Input Capacitance (Ciss) (Max) @ Vds | 855 pF @ 6 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain-Source-Spannung | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Max. Verlustleistung | 1.2W (Ta), 31W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-XDFN |
| Hersteller-Gehäuse | DSN1010-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
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