Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3mOhm @ 25A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6150 pF @ 10 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 950mV @ 1mA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Max. Verlustleistung | 62.5W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SC-100, SOT-669 |
| Hersteller-Gehäuse | LFPAK56, Power-SO8 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|