Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | PDTB113 |
|---|---|
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Power - Max | 325 mW |
| Frequency - Transition | 150 MHz |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-XDFN Exposed Pad |
| Hersteller-Gehäuse | DFN1010D-3 |
| Grade | Automotive |
|---|---|
| Qualification | AEC-Q101 |