Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.1Ohm @ 200mA, 4.5V |
|---|---|
| Konfiguration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 15V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Power - Max | 445mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | 6-TSSOP |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |