Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 190mOhm @ 3.9A, 6V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 400 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount, Wettable Flank |
| Product Status | Active |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | +7V, -1.4V |
| Vgs(th) (Max) @ Id | 2.5V @ 12.2mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Max. Verlustleistung | 125W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | DFN5060-5 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|