Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | GaNFET (Cascode Gallium Nitride FET) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 47.2A |
| Max. Verlustleistung | 187W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|