Allgemein
| Rds On (Max) @ Id, Vgs | 13.6mOhm @ 10A, 10V |
|---|---|
| Konfiguration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 19.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |