Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2001 pF @ 25 V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Max. Verlustleistung | 75W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |