Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 24mOhm @ 5A, 10V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 701pF @ 25V |
| Hersteller | Nexperia USA Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Drain-Source-Spannung | 40V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.2A |
| Power - Max | 32W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-1205, 8-LFPAK56 |
| Hersteller-Gehäuse | LFPAK56D |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q100 |