Allgemein
| Hersteller | Microsemi Corporation |
|---|---|
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Obsolet |
| Transistor Type | NPN |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | Microsemi Corporation |
|---|---|
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Obsolet |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
|---|---|
| Current - Collector (Ic) (Max) | 640mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 50mA, 5V |
| Power - Max | 8W |
| Frequency - Transition | 175MHz |
| Gain | 12dB |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
|---|---|
| Hersteller-Gehäuse | TO-39 |
| Betriebstemperatur | 200°C (TJ) |
|---|