Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Max. Verlustleistung | 800mW (Tc) |
| Gehäuse | Bulk |
|---|---|
| Hersteller-Gehäuse | TO-205AF (TO-39) |
| Grade | Military |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | MIL-PRF-19500/555 |