Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 350mOhm @ 6.5A, 12V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 12 V |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | Military, MIL-PRF-19500/630 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Max. Verlustleistung | 25W (Tc) |
| Gehäuse | Tray |
|---|---|
| Package / Case | TO-205AF Metal Can |
| Hersteller-Gehäuse | TO-205AF (TO-39) |
| Betriebstemperatur | -55°C~150°C |
|---|