Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 490mOhm @ 9.4A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 12 V |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Verpackung | Tray |
| Teilestatus | Obsolet |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Max. Verlustleistung | 2W (Ta), 75W (Tc) |
| Hersteller-Gehäuse | TO-257 |
|---|
| Grade | Military |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | MIL-PRF-19500/614 |