Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 110mOhm @ 26A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 12 V |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | Military, MIL-PRF-19500/603 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Max. Verlustleistung | 150W (Tc) |
| Gehäuse | Tray |
|---|---|
| Package / Case | TO-254-3, TO-254AA (Straight Leads) |
| Hersteller-Gehäuse | TO-254AA |
| Betriebstemperatur | -55°C~150°C |
|---|