Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 10V |
|---|---|
| Konfiguration | 4 N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Power - Max | 1.4W |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 14-DIP (0.300", 7.62mm) |
| Hersteller-Gehäuse | MO-036AB |
| Grade | Military |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | MIL-PRF-19500/597 |