Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Konfiguration | Half Bridge |
|---|---|
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 1.8 nF @ 25 V |
| Hersteller | Microsemi Corporation |
| Montageart | Chassis Mount |
| NTC Thermistor | Yes |
| Product Status | Obsolete |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Cutoff (Max) | 250 µA |
| Power - Max | 156 W |
| Gehäuse | Bulk |
|---|---|
| Package / Case | SP1 |
| Hersteller-Gehäuse | SP1 |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
|---|