Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Konfiguration | Asymmetrical Bridge |
|---|---|
| IGBT Type | NPT |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 8.6 nF @ 25 V |
| Hersteller | Microsemi Corporation |
| Montageart | Chassis Mount |
| NTC Thermistor | No |
| Verpackung | Bulk |
| Teilestatus | Obsolet |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 180A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 220 A |
| Current - Collector Cutoff (Max) | 300 µA |
| Power - Max | 833 W |
| Package / Case | SP6 |
|---|---|
| Hersteller-Gehäuse | SP6 |