Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max. Verlustleistung | 555W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|