Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 2.5A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 249 pF @ 1000 V |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 3.2V @ 500µA |
| Drain-Source-Spannung | 1700 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Max. Verlustleistung | 65W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|