Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 45mOhm @ 22.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
| Hersteller | Microsemi Corporation |
| Montageart | Chassis Mount |
| Verpackung | Bulk |
| Teilestatus | Obsolet |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Max. Verlustleistung | 290W (Tc) |
| Package / Case | SOT-227-4, miniBLOC |
|---|---|
| Hersteller-Gehäuse | SOT-227 |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
|---|