Allgemein
| Basis-Teilenummer | APT2X21 |
|---|---|
| Diode Configuration | 2 Independent |
| Hersteller | Microsemi Corporation |
| Montageart | Chassis Mount |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 0 ns |
| Technologie | SiC (Silicon Carbide) Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | APT2X21 |
|---|---|
| Diode Configuration | 2 Independent |
| Hersteller | Microsemi Corporation |
| Montageart | Chassis Mount |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 0 ns |
| Technologie | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Current - Reverse Leakage @ Vr | 400 µA @ 600 V |
| Geschwindigkeit | No Recovery Time > 500mA (Io) |
| Package / Case | ISOTOP |
|---|---|
| Hersteller-Gehäuse | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|