Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2440 pF @ 25 V |
| Hersteller | Microsemi Corporation |
| Montageart | Surface Mount |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Serie | CoolMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Max. Verlustleistung | 208W (Tc) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
|---|---|
| Hersteller-Gehäuse | D3PAK |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|