Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | APT11G |
|---|---|
| Gate Charge | 40 nC |
| IGBT Type | PT |
| Eingangstyp | Standard |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | POWER MOS 7® |
| Switching Energy | 46µJ (on), 90µJ (off) |
| Td (on/off) @ 25°C | 7ns/29ns |
| Test Condition | 400V, 11A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 11A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 41 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 187 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|