Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | APT11G |
|---|---|
| Gate Charge | 65 nC |
| IGBT Type | NPT |
| Eingangstyp | Standard |
| Hersteller | Microsemi Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Switching Energy | 300µJ (on), 285µJ (off) |
| Td (on/off) @ 25°C | 7ns/100ns |
| Test Condition | 800V, 8A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 8A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 25 A |
| Current - Collector Pulsed (Icm) | 44 A |
| Power - Max | 156 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220 [K] |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|