Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 300mOhm @ 4.1A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Hersteller | Microsemi Corporation |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Max. Verlustleistung | 800mW (Ta), 25W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 18-CLCC |
| Hersteller-Gehäuse | 18-ULCC (9.14x7.49) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|