Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 350mOhm @ 4A, 10V |
|---|---|
| Basis-Teilenummer | VN2210 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 10mA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tj) |
| Max. Verlustleistung | 360mW (Tc) |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Hersteller-Gehäuse | TO-39 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|