Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 500mA, 10V |
|---|---|
| Basis-Teilenummer | TN2106 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Tj) |
| Max. Verlustleistung | 360mW (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | TO-236AB (SOT23) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|