Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 210mOhm @ 7.8A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 25 V |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-Source-Spannung | 250 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 12.4A (Tc) |
| Max. Verlustleistung | 75W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 3-SMD, No Lead |
| Hersteller-Gehäuse | U3 (SMD-0.5) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|