Allgemein
| Basis-Teilenummer | 2N3766 |
|---|---|
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 100mA, 1A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 2N3766 |
|---|---|
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 100mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
|---|---|
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Power - Max | 25 W |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-213AA, TO-66-2 |
| Hersteller-Gehäuse | TO-66 (TO-213AA) |
| Grade | Military |
|---|---|
| Betriebstemperatur | -65°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/518 |