Allgemein
| Basis-Teilenummer | 2N3810 |
|---|---|
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 2N3810 |
|---|---|
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
|---|---|
| Current - Collector (Ic) (Max) | 30mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Power - Max | 350mW |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-78-6 Metal Can |
| Hersteller-Gehäuse | TO-78-6 |
| Grade | Military |
|---|---|
| Betriebstemperatur | -65°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/336 |