Allgemein
| Capacitance @ Vr, F | 1.2pF @ 4V, 1MHz |
|---|---|
| Capacitance Ratio | 3.4 |
| Capacitance Ratio Condition | C0/C30 |
| Diode Type | Single |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Q @ Vr, F | 3200 @ 4V, 50MHz |
| Serie | GCX1202 |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 1.2pF @ 4V, 1MHz |
|---|---|
| Capacitance Ratio | 3.4 |
| Capacitance Ratio Condition | C0/C30 |
| Diode Type | Single |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Q @ Vr, F | 3200 @ 4V, 50MHz |
| Serie | GCX1202 |
| Voltage - Peak Reverse (Max) | 30 V |
|---|
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SOT-23-3 |
| Betriebstemperatur | -55°C ~ 125°C |
|---|