Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1A, 0V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.04 nC @ 1.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 250 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Tj) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Hersteller-Gehäuse | TO-252, (D-Pak) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|