Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | APT80GA90 |
|---|---|
| Gate Charge | 200 nC |
| IGBT Type | PT |
| Eingangstyp | Standard |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | POWER MOS 8® |
| Switching Energy | 1.625mJ (on), 1.389mJ (off) |
| Td (on/off) @ 25°C | 18ns/149ns |
| Test Condition | 600V, 47A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 47A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
|---|---|
| Current - Collector (Ic) (Max) | 145 A |
| Current - Collector Pulsed (Icm) | 239 A |
| Power - Max | 625 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Hersteller-Gehäuse | D3PAK |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|