Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 230 nC |
|---|---|
| IGBT Type | PT |
| Eingangstyp | Standard |
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 22 ns |
| Serie | POWER MOS 8™ |
| Switching Energy | 840µJ (on), 751µJ (off) |
| Td (on/off) @ 25°C | 23ns/158ns |
| Test Condition | 400V, 47A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 47A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 143 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 625 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| Hersteller-Gehäuse | TO-264 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|