Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 198 nC |
|---|---|
| IGBT Type | PT |
| Eingangstyp | Standard |
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 22 ns |
| Serie | POWER MOS 8™ |
| Switching Energy | 715µJ (on), 607µJ (off) |
| Td (on/off) @ 25°C | 21ns/133ns |
| Test Condition | 400V, 40A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 121 A |
| Current - Collector Pulsed (Icm) | 202 A |
| Power - Max | 520 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| Hersteller-Gehäuse | TO-264 [L] |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|