Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1385 pF @ 25 V |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | POWER MOS 8™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Max. Verlustleistung | 175W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Hersteller-Gehäuse | D3PAK |