Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 102 nC |
|---|---|
| IGBT Type | PT |
| Eingangstyp | Standard |
| Hersteller | Microchip Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 19 ns |
| Serie | POWER MOS 8® |
| Switching Energy | 307µJ (on), 254µJ (off) |
| Td (on/off) @ 25°C | 16ns/122ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 65 A |
| Current - Collector Pulsed (Icm) | 109 A |
| Power - Max | 290 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Hersteller-Gehäuse | D3PAK |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|