Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | APT35GA90 |
|---|---|
| Gate Charge | 84 nC |
| IGBT Type | PT |
| Eingangstyp | Standard |
| Hersteller | Microchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | POWER MOS 8™ |
| Switching Energy | 642µJ (on), 382µJ (off) |
| Td (on/off) @ 25°C | 12ns/104ns |
| Test Condition | 600V, 18A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 18A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
|---|---|
| Current - Collector (Ic) (Max) | 63 A |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 290 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247 [B] |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|