Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 59000 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Chassis Mount |
| Product Status | Obsolete |
| Serie | HiPerFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 6V @ 130mA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 690A (Tc) |
| Max. Verlustleistung | 2500W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | Y3-DCB |
| Hersteller-Gehäuse | Y3-DCB |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
|---|