Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 60A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 335 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | GigaMOS™, HiPerFET™, TrenchT2™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Drain-Source-Spannung | 300 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Max. Verlustleistung | 570W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | 24-PowerSMD, 21 Leads |
| Hersteller-Gehäuse | 24-SMPD |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|