Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.6Ohm @ 400mA, 0V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | Depletion |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 500 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Max. Verlustleistung | 60W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Hersteller-Gehäuse | TO-252AA |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|