Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 64mOhm @ 8A, 0V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Surface Mount |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Serie | Depletion |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Max. Verlustleistung | 830W (Tc) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
|---|---|
| Hersteller-Gehäuse | TO-268AA |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|