Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 80Ohm @ 50mA, 0V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | Depletion |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Drain-Source-Spannung | 1000 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Max. Verlustleistung | 1.1W (Ta), 25W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|