Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 30mOhm @ 51A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10900 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | Ultra X2 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Max. Verlustleistung | 1040W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| Hersteller-Gehäuse | TO-264 (IXTK) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|