Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 545 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | Linear |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain-Source-Spannung | 1000 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Max. Verlustleistung | 800W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| Hersteller-Gehäuse | PLUS264™ |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|