Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 14mOhm @ 55A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6570 pF @ 25 V |
| Hersteller | IXYS |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchT2™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Drain-Source-Spannung | 120 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Max. Verlustleistung | 517W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | TO-263AA |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|